RFD14N05LSM Generic image

RFD14N05LSM

Part No
RFD14N05LSM
Manufacturer
onsemi
Description
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ
Datasheet
RFD14N05LSM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 14 A
    Current Rating 14 A
    Drain to Source Breakdown Voltage 50 V
    Drain to Source Resistance 100 mΩ
    Drain to Source Voltage (Vdss) 50 V
    Dual Supply Voltage 50 V
    Element Configuration Single
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 10 V
    Input Capacitance 670 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 48 W
    Min Breakdown Voltage 50 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2 V
    Number of Channels 1
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 48 W
    Rds On Max 100 mΩ
    Recovery Time 125 ns
    Resistance 100 mΩ
    Rise Time 24 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 2 V
    Turn-Off Delay Time 42 ns
    Turn-On Delay Time 13 ns
    Voltage Rating (DC) 50 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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