RFD3055LE Generic image

RFD3055LE

Part No
RFD3055LE
Manufacturer
onsemi
Description
N-Channel Logic Level Power MOSFET 60V, 11A, 107mΩ
Datasheet
RFD3055LE
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current Rating 11 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 107 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 39 ns
    Gate to Source Voltage (Vgs) 16 V
    Input Capacitance 350 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 38 W
    Rds On Max 107 mΩ
    Recovery Time 66 ns
    Resistance 107 mΩ
    Rise Time 105 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 22 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-251-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 343.08 mg
    Height 9.85 mm
    Length 6.8 mm
    Width 2.5 mm
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