RFP50N06 Generic image

RFP50N06

Part No
RFP50N06
Manufacturer
onsemi
Description
Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB
Datasheet
RFP50N06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Current Rating 50 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.02 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 131 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 131 W
    Rds On Max 22 mΩ
    Resistance 22 mΩ
    Rise Time 55 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 37 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.67 mm
    Width 4.83 mm
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