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PTF180101S V1
- Part No
- PTF180101S V1
- Manufacturer
- Infineon
- Description
- RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Datasheet
- PTF180101S V1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Upon a request
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 1 µA |
| Drain to Source Breakdown Voltage | 65 V |
| Drain to Source Resistance | 830 mΩ |
| Drain to Source Voltage (Vdss) | 65 V |
| Element Configuration | Single |
| Frequency | 1.99 GHz |
| Gain | 19 dB |
| Gate to Source Voltage (Vgs) | 12 V |
| Max Operating Temperature | 200 °C |
| Max Power Dissipation | 58 W |
| Min Breakdown Voltage | 65 V |
| Min Operating Temperature | -40 °C |
| Number of Elements | 1 |
| Output Power | 10 W |
| Power Dissipation | 58 W |
| Test Current | 180 mA |
| Test Voltage | 28 V |
| Voltage Rating | 65 V |
| Voltage Rating (DC) | 65 V |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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