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IPB020N08N5ATMA1
- Part No
- IPB020N08N5ATMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 80 V 2 mOhm 156 nC OptiMOS Power Mosfet - D2PAK-3
- Datasheet
- IPB020N08N5ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 120 A |
| Drain to Source Breakdown Voltage | 80 V |
| Drain to Source Resistance | 2 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Element Configuration | Single |
| Fall Time | 20 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 9.3 nF |
| Max Dual Supply Voltage | 80 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 300 W |
| Min Breakdown Voltage | 80 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 2 mΩ |
| Package Quantity | 1000 |
| Packaging | Tape & Reel |
| Power Dissipation | 300 W |
| Rds On Max | 2 mΩ |
| Rise Time | 16 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 62 ns |
| Turn-On Delay Time | 28 ns |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 3.949996 g |
| Height | 4.5 mm |
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