Generic image
IPD105N03LGATMA1
- Part No
- IPD105N03LGATMA1
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 30V 35A TO252-3
- Datasheet
- IPD105N03LGATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 35 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 10.5 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Fall Time | 2.4 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.5 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 38 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 38 W |
| Rds On Max | 10.5 mΩ |
| Rise Time | 14 ns |
| Turn-Off Delay Time | 14 ns |
| Turn-On Delay Time | 3.7 ns |
| Case/Package | TO-252-3 |
| Mount | Surface Mount |
| Number of Terminals | 2 |
added to cart
View cart
Related Products
