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NZT45H8

Part No: NZT45H8
Manufacturer: onsemi
Description: Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Datasheet: NZT45H8
Test Report: Available
Samples: Available

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Specification	Value
Collector Emitter Breakdown Voltage	60 V
Collector Emitter Saturation Voltage	1 V
Collector Emitter Voltage (VCEO)	60 V
Current Rating	-8 A
Element Configuration	Single
Emitter Base Voltage (VEBO)	-5 V
Frequency	40 MHz
Gain Bandwidth Product	40 MHz
hFE Min	40
Max Breakdown Voltage	60 V
Max Collector Current	8 A
Max Operating Temperature	150 °C
Max Power Dissipation	1.5 W
Min Operating Temperature	-55 °C
Number of Elements	1
Polarity	PNP
Power Dissipation	1.5 W
Schedule B	8541210080, 8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|8541210080\|85
Transition Frequency	40 MHz
Voltage Rating (DC)	-60 V
Case/Package	SOT-223
Mount	Surface Mount
Number of Pins	4
Number of Terminals	4
Weight	188 mg
Height	6.35 mm
Length	6.35 mm
Width	6.35 mm