NZT751 Generic image

NZT751

Part No
NZT751
Manufacturer
onsemi
Description
Power Bipolar Transistor, 4A I(C), 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Datasheet
NZT751
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) -80 V
    Collector Emitter Breakdown Voltage -60 V
    Collector Emitter Saturation Voltage -500 mV
    Collector Emitter Voltage (VCEO) 60 V
    Current Rating -4 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) -5 V
    Frequency 75 MHz
    Gain Bandwidth Product 75 MHz
    hFE Min 40
    Max Breakdown Voltage 60 V
    Max Collector Current 4 A
    Max Frequency 75 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.2 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel
    Polarity PNP
    Power Dissipation 1.2 W
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Transition Frequency 75 MHz
    Voltage Rating (DC) -60 V
    Case/Package SOT-223
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.7 mm
    Width 3.7 mm
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