NDT451AN Generic image

NDT451AN

Part No
NDT451AN
Manufacturer
onsemi
Description
Mosfet Transistor, N Channel, 7.2 A, 30 V, 0.03 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Onsemi NDT451AN
Datasheet
NDT451AN
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.2 A
    Current Rating 7.1 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 720 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -65 °C
    Nominal Vgs 1.6 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.1 W
    Rds On Max 35 mΩ
    Resistance 35 mΩ
    Rise Time 13 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.6 V
    Turn-Off Delay Time 29 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 30 V
    Case/Package SOT-223-4
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.7 mm
    Width 3.7 mm
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