NVATS5A112PLZT4G Generic image

NVATS5A112PLZT4G

Part No
NVATS5A112PLZT4G
Manufacturer
onsemi
Description
MOSFET P-CH 60V 27A ATPAK / P-Channel 60 V 27A (Ta) 48W (Tc) Surface Mount DPAK/ATPAK
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 27 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 43 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Gate to Source Voltage (Vgs) 20 V
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 48 W
    Schedule B 8541290080
    Turn-Off Delay Time 150 ns
    Turn-On Delay Time 10 ns
    Case/Package DPAK
    Number of Terminals 2
    Height 1.83 mm
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