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EMX1DXV6T5
- Part No
- EMX1DXV6T5
- Manufacturer
- onsemi
- Description
- NPN SEPARATE 2ELEMENTS 6 EAR99 Bipolar (BJT) Transistor Array 0.1A 180MHz 50V
- Datasheet
- EMX1DXV6T5
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 60 V |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Emitter Base Voltage (VEBO) | 7 V |
| Gain Bandwidth Product | 180 MHz |
| hFE Min | 120 |
| Max Collector Current | 100 mA |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 357 mW |
| Min Operating Temperature | -55 °C |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Transition Frequency | 180 MHz |
| Voltage Rating (DC) | 50 V |
| Case/Package | SOT-563-6 |
| Contact Plating | Tin |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 600 µm |
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