MJD31CT4G Generic image

MJD31CT4G

Part No
MJD31CT4G
Manufacturer
onsemi
Description
TRANS NPN 100V 3A DPAK
Datasheet
MJD31CT4G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 100 V
    Collector Emitter Breakdown Voltage 100 V
    Collector Emitter Saturation Voltage 1.2 V
    Collector Emitter Voltage (VCEO) 100 V
    Current Rating 3 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 3 MHz
    Gain Bandwidth Product 3 MHz
    hFE Min 10
    Max Breakdown Voltage 100 V
    Max Collector Current 3 A
    Max Frequency 3 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 15 W
    Min Operating Temperature -65 °C
    Number of Elements 1
    Packaging Tape and Reel
    Polarity NPN
    Power Dissipation 1.56 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Transition Frequency 3 MHz
    Voltage Rating (DC) 100 V
    Case/Package DPAK
    Contact Plating Tin
    Number of Pins 3
    Number of Terminals 2
    Height 2.38 mm
    Length 6.73 mm
    Width 6.22 mm
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