NTD4858NT4G Generic image

NTD4858NT4G

Part No
NTD4858NT4G
Manufacturer
onsemi
Description
NTD4858NT4G N-channel MOSFET Transistor, 73 A, 25 V, 3-Pin DPAK | ON Semiconductor NTD4858NT4G
Datasheet
NTD4858NT4G
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.2 A
    Drain to Source Breakdown Voltage 25 V
    Drain to Source Resistance 9.3 mΩ
    Drain to Source Voltage (Vdss) 25 V
    Element Configuration Single
    Fall Time 2.8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.563 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 54.5 W
    Min Breakdown Voltage 25 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 2 W
    Rds On Max 6.2 mΩ
    Resistance 6.2 MΩ
    Rise Time 17.3 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 23.8 ns
    Turn-On Delay Time 12.6 ns
    Case/Package DPAK
    Number of Pins 4
    Number of Terminals 2
    Height 2.38 mm
    Length 6.73 mm
    Width 6.22 mm
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