FJY3011R Generic image

FJY3011R

Part No
FJY3011R
Manufacturer
onsemi
Description
NPN Epitaxial Silicon Transistor | TRANS PREBIAS NPN 200MW SOT523F
Datasheet
FJY3011R
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 40 V
    Collector Emitter Voltage (VCEO) 40 V
    Continuous Collector Current 100 mA
    Current Rating 100 mA
    Element Configuration Single
    hFE Min 100
    Max Breakdown Voltage 40 V
    Max Collector Current 100 mA
    Max Operating Temperature 150 °C
    Max Power Dissipation 200 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 200 mW
    Termination SMD/SMT
    Transition Frequency 250 MHz
    Voltage Rating (DC) 40 V
    Case/Package SOT-523
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
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