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IRF7811AVPBF
- Part No
- IRF7811AVPBF
- Manufacturer
- Infineon
- Description
- Mosfet, Power; N-ch; Vdss 30V; Rds(on) 11 Milliohms; Id 10.8A; SO-8; Pd 2.5W; Vgs +/-20
- Datasheet
- IRF7811AVPBF
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 10.8 A |
| Current Rating | 14 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 14 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.801 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Elements | 1 |
| On-State Resistance | 14 mΩ |
| Package Quantity | 3800 |
| Packaging | Bulk |
| Power Dissipation | 2.5 W |
| Rds On Max | 14 mΩ |
| Rise Time | 21 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 43 ns |
| Turn-On Delay Time | 8.6 ns |
| Voltage Rating (DC) | 30 V |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Height | 1.4986 mm |
| Length | 4.9784 mm |
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