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IRF520NSTRLPBF
- Part No
- IRF520NSTRLPBF
- Manufacturer
- Infineon
- Description
- Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-252-3, IRF520NSTRLPBF
- Datasheet
- IRF520NSTRLPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 9.7 A |
| Current Rating | 9.7 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 200 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 23 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 330 pF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 48 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 200 mΩ |
| Package Quantity | 800 |
| Packaging | Bulk |
| Power Dissipation | 3.8 W |
| Rds On Max | 200 mΩ |
| Rise Time | 23 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 32 ns |
| Turn-On Delay Time | 4.5 ns |
| Voltage Rating (DC) | 100 V |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 5.084 mm |
| Length | 10.668 mm |
| Width | 9.65 mm |
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