BSB165N15NZ3GXUMA1 Generic image

BSB165N15NZ3GXUMA1

Part No
BSB165N15NZ3GXUMA1
Manufacturer
Infineon
Description
MOSFET N-CH 150V 9A/45A 2WDSON / N-Channel 150 V 9A (Ta), 45A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Datasheet
BSB165N15NZ3GXUMA1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Drain to Source Resistance 16.5 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Fall Time 7 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.1 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 78 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -40 °C
    Number of Elements 1
    On-State Resistance 16.5 mΩ
    Package Quantity 5000
    Packaging Tape & Reel
    Power Dissipation 78 W
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 17 ns
    Turn-On Delay Time 10 ns
    Body Material Metal
    Mount Surface Mount
    Number of Terminals 3
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