IRF6618TRPBF Generic image

IRF6618TRPBF

Part No
IRF6618TRPBF
Manufacturer
Infineon
Description
Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R / MOSFET N-CH 30V 30A DIRECTFET
Datasheet
IRF6618TRPBF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 A
    Current Rating 30 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 2.2 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 8.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.64 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 89 W
    Manufacturer Package Identifier MG-WDSON-5
    Min Breakdown Voltage 30 V
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 2.2 mΩ
    Package Quantity 4800
    Packaging Tape & Reel
    Power Dissipation 2.8 W
    Rds On Max 2.2 mΩ
    Resistance 2.2 MΩ
    Rise Time 71 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.64 V
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 21 ns
    Voltage Rating (DC) 30 V
    Mount Surface Mount
    Number of Pins 5
    Number of Terminals 3
    Height 700 µm
    Length 6.35 mm
    Width 5.0546 mm
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