IRF7463TRPBF Generic image

IRF7463TRPBF

Part No
IRF7463TRPBF
Manufacturer
Infineon
Description
Single N-Channel 30 V 8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
Datasheet
IRF7463TRPBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 14 A
    Current Rating 14 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 8 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 6.5 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 3.15 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 8 mΩ
    Package Quantity 4000
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 8 mΩ
    Resistance 8 MΩ
    Rise Time 138 ns
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 16 ns
    Voltage Rating (DC) 30 V
    Case/Package SO
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 4.9784 mm
    Width 3.9878 mm
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