IPD800N06NGBTMA1 Generic image

IPD800N06NGBTMA1

Part No
IPD800N06NGBTMA1
Manufacturer
Infineon
Description
MOSFET N-CH 60V 16A TO-252
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Drain to Source Resistance 80 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Fall Time 27 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 370 pF
    Max Operating Temperature 175 °C
    Max Power Dissipation 47 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 47 W
    Rds On Max 80 mΩ
    Rise Time 38 ns
    Turn-Off Delay Time 22 ns
    Turn-On Delay Time 7 ns
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Terminals 2
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