Generic image
IRF5804TRPBF
- Part No
- IRF5804TRPBF
- Manufacturer
- Infineon
- Description
- -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
- Datasheet
- IRF5804TRPBF
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 2.5 A |
| Drain to Source Breakdown Voltage | -40 V |
| Drain to Source Resistance | 198 mΩ |
| Drain to Source Voltage (Vdss) | -40 V |
| Dual Supply Voltage | -40 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 680 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 40 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2 W |
| Rds On Max | 198 mΩ |
| Termination | SMD/SMT |
| Threshold Voltage | -3 V |
| Turn-Off Delay Time | 100 ns |
| Turn-On Delay Time | 19 ns |
| Case/Package | SOT-23-6 |
| Mount | Surface Mount |
| Number of Pins | 6 |
| Number of Terminals | 6 |
| Height | 1.1 mm |
added to cart
View cart