IRF5804TRPBF Generic image

IRF5804TRPBF

Part No
IRF5804TRPBF
Manufacturer
Infineon
Description
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Datasheet
IRF5804TRPBF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.5 A
    Drain to Source Breakdown Voltage -40 V
    Drain to Source Resistance 198 mΩ
    Drain to Source Voltage (Vdss) -40 V
    Dual Supply Voltage -40 V
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 680 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 40 V
    Min Operating Temperature -55 °C
    Nominal Vgs -3 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2 W
    Rds On Max 198 mΩ
    Termination SMD/SMT
    Threshold Voltage -3 V
    Turn-Off Delay Time 100 ns
    Turn-On Delay Time 19 ns
    Case/Package SOT-23-6
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Height 1.1 mm
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