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IPP114N12N3GXKSA1
- Part No
- IPP114N12N3GXKSA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 120 V 11.4 mOhm 49 nC OptiMOS Power Mosfet - TO-220-3
- Datasheet
- IPP114N12N3GXKSA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 75 A |
| Drain to Source Resistance | 11.4 mΩ |
| Drain to Source Voltage (Vdss) | 120 V |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.24 nF |
| Max Dual Supply Voltage | 120 V |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 136 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| On-State Resistance | 11.4 mΩ |
| Package Quantity | 500 |
| Power Dissipation | 136 W |
| Rds On Max | 11.4 mΩ |
| Rise Time | 36 ns |
| Turn-Off Delay Time | 30 ns |
| Turn-On Delay Time | 19 ns |
| Case/Package | TO-220 |
| Mount | Through Hole |
| Number of Terminals | 3 |
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