BC850CWH6327XTSA1 Generic image

BC850CWH6327XTSA1

Part No
BC850CWH6327XTSA1
Manufacturer
Infineon
Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
Datasheet
BC850CWH6327XTSA1
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 6 V
    Collector Emitter Breakdown Voltage 45 V
    Collector Emitter Saturation Voltage 600 mV
    Collector Emitter Voltage (VCEO) 45 V
    Continuous Collector Current 100 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 6 V
    Frequency 250 MHz
    hFE Min 420
    Max Collector Current 100 mA
    Max Frequency 250 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 250 mW
    Min Operating Temperature -65 °C
    Number of Elements 1
    Package Quantity 3000
    Packaging Tape & Reel
    Polarity NPN
    Power Dissipation 250 mW
    Schedule B 8541210080
    Transition Frequency 250 MHz
    Case/Package SOT
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 800 µm
    Length 2 mm
    Width 1.25 mm
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