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IPD16CN10N G
- Part No
- IPD16CN10N G
- Manufacturer
- Infineon
- Description
- MOSFET N-CH 100V 53A TO252-3
- Datasheet
- IPD16CN10N G
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 53 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 16 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 7 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.22 nF |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 100 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 100 W |
| Rds On Max | 16 mΩ |
| Rise Time | 14 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 27 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | TO-252 |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
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