IRF7421D1PBF Generic image

IRF7421D1PBF

Part No
IRF7421D1PBF
Manufacturer
Infineon
Description
30V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7421D1PBF
Datasheet
IRF7421D1PBF
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.8 A
    Current Rating 5.8 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Fall Time 16 ns
    Forward Current 4 A
    Forward Voltage 420 mV
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 510 pF
    Max Forward Surge Current (Ifsm) 15 A
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Elements 1
    Packaging Bulk
    Rds On Max 35 mΩ
    Rise Time 27 ns
    Threshold Voltage 4 V
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 6.7 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.4986 mm
    Length 4.9784 mm
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