AUIRFB8407 Generic image

AUIRFB8407

Part No
AUIRFB8407
Manufacturer
Infineon
Description
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Datasheet
AUIRFB8407
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 195 A
    Drain to Source Breakdown Voltage 40 V
    Drain to Source Resistance 1.6 mΩ
    Drain to Source Voltage (Vdss) 40 V
    Element Configuration Single
    Fall Time 53 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 7.33 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 230 W
    Min Operating Temperature -55 °C
    Nominal Vgs 3 V
    Number of Channels 1
    Number of Elements 1
    On-State Resistance 2 mΩ
    Package Quantity 1000
    Power Dissipation 230 W
    Rds On Max 2 mΩ
    Rise Time 70 ns
    Threshold Voltage 3 V
    Turn-Off Delay Time 78 ns
    Turn-On Delay Time 19 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Height 20.56 mm
    Length 10.67 mm
    Width 3.43 mm
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