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IPD046N08N5ATMA1
- Part No
- IPD046N08N5ATMA1
- Manufacturer
- Infineon
- Description
- Mosfet, N-Ch, 80V, 90A, 175Deg C, 125W Rohs Compliant: Yes |Infineon IPD046N08N5ATMA1
- Datasheet
- IPD046N08N5ATMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 90 A |
| Drain to Source Breakdown Voltage | 80 V |
| Drain to Source Resistance | 4.6 mΩ |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 125 W |
| Min Breakdown Voltage | 80 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 4.6 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 125 W |
| Turn-Off Delay Time | 21 ns |
| Turn-On Delay Time | 11 ns |
| Number of Terminals | 2 |
| Height | 2.5 mm |
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