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AUIRF3205ZS
- Part No
- AUIRF3205ZS
- Manufacturer
- Infineon
- Description
- Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
- Datasheet
- AUIRF3205ZS
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 75 A |
| Drain to Source Breakdown Voltage | 55 V |
| Drain to Source Resistance | 6.5 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Element Configuration | Single |
| Fall Time | 67 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 3.45 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 170 W |
| Min Breakdown Voltage | 55 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 6.5 mΩ |
| Package Quantity | 1000 |
| Power Dissipation | 170 W |
| Rds On Max | 6.5 mΩ |
| Rise Time | 95 ns |
| Threshold Voltage | 2 V |
| Turn-Off Delay Time | 45 ns |
| Turn-On Delay Time | 18 ns |
| Case/Package | D2PAK |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Height | 5.084 mm |
| Length | 10.67 mm |
| Width | 11.3 mm |
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