Generic image
IPD70R900P7SAUMA1
- Part No
- IPD70R900P7SAUMA1
- Manufacturer
- Infineon
- Description
- Single N-Channel 700 V 900 mOhm 6.8 nC CoolMOS Power Mosfet - DPAK
- Datasheet
- IPD70R900P7SAUMA1
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Breakdown Voltage | 700 V |
| Drain to Source Resistance | 900 mΩ |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 30.5 W |
| Min Breakdown Voltage | 700 V |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 900 mΩ |
| Package Quantity | 2500 |
| Packaging | Tape & Reel |
| Power Dissipation | 30.5 W |
| Turn-Off Delay Time | 58 ns |
| Turn-On Delay Time | 12 ns |
| Case/Package | DPAK |
| Number of Terminals | 2 |
| Height | 2.55 mm |
added to cart
View cart
Related Products