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HGTP3N60A4D
- Part No
- HGTP3N60A4D
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail
- Datasheet
- HGTP3N60A4D
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Current Rating | 17 A |
| Element Configuration | Single |
| Fall Time | 100 ns |
| Max Collector Current | 17 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 70 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 70 W |
| Reverse Recovery Time | 19 ns |
| Rise Time | 15 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
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