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HGTG20N60B3D
- Part No
- HGTG20N60B3D
- Manufacturer
- onsemi
- Description
- The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These
- Datasheet
- HGTG20N60B3D
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 40 A |
| Current Rating | 20 A |
| Element Configuration | Single |
| Fall Time | 175 ns |
| Max Breakdown Voltage | 600 V |
| Max Collector Current | 40 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 165 W |
| Min Operating Temperature | -40 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 165 W |
| Reverse Recovery Time | 55 ns |
| Rise Time | 20 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 220 ns |
| Turn-On Delay Time | 25 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-247 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.39 g |
| Height | 24.75 mm |
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