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HGTP12N60C3D
- Part No
- HGTP12N60C3D
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 600V 24A 104000mW 3-Pin(3+Tab) TO-220AB Rail
- Datasheet
- HGTP12N60C3D
- Test Report
- Available
- Samples
- Available
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- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.2 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Current Rating | 24 A |
| Element Configuration | Single |
| Fall Time | 275 ns |
| Max Collector Current | 24 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 104 W |
| Min Operating Temperature | -40 °C |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 104 W |
| Reverse Recovery Time | 40 ns |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 270 ns |
| Turn-On Delay Time | 28 µs |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-220AB |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
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