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H11G1M
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Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 100 V |
| Collector Emitter Saturation Voltage | 1 V |
| Collector Emitter Voltage (VCEO) | 100 V |
| Current Transfer Ratio | 1000 % |
| Dark Current | 100 nA |
| Fall Time | 100 µs |
| Forward Current | 60 mA |
| Forward Voltage | 1.5 V |
| Isolation Voltage | 7.5 kV |
| Max Input Current | 60 mA |
| Max Junction Temperature (Tj) | 125 °C |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 100 V |
| Max Power Dissipation | 260 mW |
| Min Operating Temperature | -40 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 290 mW |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Reverse Voltage (DC) | 6 V |
| Rise Time | 5 µs |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Turn-Off Delay Time | 100 µs |
| Turn-On Delay Time | 5 µs |
| Case/Package | DIP |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 6 |
| Weight | 855 mg |
| Height | 5.08 mm |
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