H11B1VM Generic image

H11B1VM

Part No
H11B1VM
Manufacturer
onsemi
Description
6-PIN DIP, High Voltage Transistor Optocoupler SMD Leadform
Datasheet
H11B1VM
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Emitter Breakdown Voltage 25 V
    Collector Emitter Saturation Voltage 1 V
    Collector Emitter Voltage (VCEO) 1 V
    Current Transfer Ratio 500 %
    Dark Current 100 nA
    Forward Current 80 mA
    Forward Voltage 1.5 V
    Isolation Voltage 4.17 kV
    Max Collector Current 150 mA
    Max Input Current 80 mA
    Max Operating Temperature 100 °C
    Max Power Dissipation 150 mW
    Min Operating Temperature -40 °C
    Number of Channels 1
    Number of Elements 1
    Output Voltage 25 V
    Packaging Bulk
    Power Dissipation 250 mW
    Reverse Breakdown Voltage 3 V
    Case/Package PDIP
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 6
    Weight 855 mg
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