FQB1P50TM Generic image

FQB1P50TM

Part No
FQB1P50TM
Manufacturer
onsemi
Description
P-Channel Power MOSFET, QFET®, -500 V, -1.5 A, 10.5 Ω, D2PAK
Datasheet
FQB1P50TM
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.5 A
    Current Rating -1.5 A
    Drain to Source Breakdown Voltage -500 V
    Drain to Source Resistance 10.5 Ω
    Drain to Source Voltage (Vdss) -500 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 350 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 63 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.13 W
    Rds On Max 10.5 Ω
    Rise Time 25 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) -500 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 9.65 mm
    Width 10.67 mm
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