FQA38N30 Generic image

FQA38N30

Part No
FQA38N30
Manufacturer
onsemi
Description
N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ
Datasheet
FQA38N30
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 38.4 A
    Current Rating 38.4 A
    Drain to Source Breakdown Voltage 300 V
    Drain to Source Resistance 85 mΩ
    Drain to Source Voltage (Vdss) 300 V
    Element Configuration Single
    Fall Time 190 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.4 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 290 W
    Min Breakdown Voltage 300 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 290 W
    Rds On Max 85 mΩ
    Rise Time 430 ns
    Turn-Off Delay Time 170 ns
    Turn-On Delay Time 80 ns
    Voltage Rating (DC) 300 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.8 mm
    Width 5 mm
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