FQA30N40 Generic image

FQA30N40

Part No
FQA30N40
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 400V, 30A, 140mΩ, TO-3P
Datasheet
FQA30N40
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 30 A
    Current Rating 30 A
    Drain to Source Breakdown Voltage 400 V
    Drain to Source Resistance 140 mΩ
    Drain to Source Voltage (Vdss) 400 V
    Element Configuration Single
    Fall Time 170 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.4 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 290 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 290 W
    Rds On Max 140 mΩ
    Resistance 140 MΩ
    Rise Time 320 ns
    Turn-Off Delay Time 190 ns
    Turn-On Delay Time 80 ns
    Voltage Rating (DC) 400 V
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 6.35 mm
    Length 6.35 mm
    Width 6.35 mm
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