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FQB19N20TM
- Part No
- FQB19N20TM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK
- Datasheet
- FQB19N20TM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 19.4 A |
| Current Rating | 19.4 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 150 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 80 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.6 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 140 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 3.13 W |
| Rds On Max | 150 mΩ |
| Resistance | 150 mΩ |
| Rise Time | 190 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 55 ns |
| Turn-On Delay Time | 20 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 1.31247 g |
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