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FQB19N20LTM

Part No: FQB19N20LTM
Manufacturer: onsemi
Description: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 21 A, 140 mΩ, D2PAK
Datasheet: FQB19N20LTM
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	21 A
Current	17 A
Current Rating	21 A
Drain to Source Breakdown Voltage	200 V
Drain to Source Resistance	150 mΩ
Drain to Source Voltage (Vdss)	200 V
Element Configuration	Single
Fall Time	180 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	2.2 nF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	140 W
Min Breakdown Voltage	200 V
Min Operating Temperature	-55 °C
Nominal Vgs	2 V
Number of Channels	1
Number of Elements	1
Power Dissipation	3.13 W
Rds On Max	140 mΩ
Resistance	140 MΩ
Rise Time	300 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Threshold Voltage	2 V
Turn-Off Delay Time	130 ns
Turn-On Delay Time	35 ns
Voltage	200 V
Voltage Rating (DC)	200 V
Case/Package	D2PAK
Contact Plating	Tin
Mount	Surface Mount
Number of Pins	3
Number of Terminals	2
Height	5.08 mm
Length	10.67 mm
Width	9.65 mm