FJX945GTF Generic image

FJX945GTF

Part No
FJX945GTF
Manufacturer
onsemi
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
Datasheet
FJX945GTF
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 60 V
    Collector Emitter Breakdown Voltage 50 V
    Collector Emitter Saturation Voltage 150 mV
    Collector Emitter Voltage (VCEO) 50 V
    Current Rating 150 mA
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 300 MHz
    Gain Bandwidth Product 300 MHz
    hFE Min 200
    Max Breakdown Voltage 50 V
    Max Collector Current 150 mA
    Max Frequency 300 MHz
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 200 mW
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 200 mW
    Transition Frequency 300 MHz
    Voltage Rating (DC) 50 V
    Case/Package SOT-323
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.1 mm
    Length 2 mm
    Width 1.25 mm
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