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FJP1943RTU
- Part No
- FJP1943RTU
- Manufacturer
- onsemi
- Description
- Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
- Datasheet
- FJP1943RTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | -230 V |
| Collector Emitter Breakdown Voltage | -230 V |
| Collector Emitter Saturation Voltage | -400 mV |
| Collector Emitter Voltage (VCEO) | 250 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5 V |
| Frequency | 30 MHz |
| Gain Bandwidth Product | 30 MHz |
| hFE Min | 55 |
| Max Collector Current | 17 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 80 W |
| Min Operating Temperature | -50 °C |
| Number of Elements | 1 |
| Polarity | PNP |
| Power Dissipation | 80 W |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Transition Frequency | 30 MHz |
| Case/Package | TO-220-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
| Height | 20.4 mm |
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