FJD3076TM Generic image

FJD3076TM

Part No
FJD3076TM
Manufacturer
onsemi
Description
NPN 10 W 32 V 2 A Surface Mount Epitaxial Silicon Transistor - TO-252
Datasheet
FJD3076TM
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Collector Base Voltage (VCBO) 40 V
    Collector Emitter Breakdown Voltage 32 V
    Collector Emitter Saturation Voltage 800 mV
    Collector Emitter Voltage (VCEO) 32 V
    Current Rating 2 A
    Element Configuration Single
    Emitter Base Voltage (VEBO) 5 V
    Frequency 100 MHz
    Gain Bandwidth Product 100 MHz
    hFE Min 130
    Max Breakdown Voltage 80 V
    Max Collector Current 2 A
    Max Frequency 100 MHz
    Max Operating Temperature 150 °C
    Max Power Dissipation 10 W
    Min Operating Temperature -55 °C
    Number of Elements 1
    Polarity NPN
    Power Dissipation 1 W
    Transition Frequency 100 MHz
    Voltage Rating (DC) 32 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.3 mm
    Length 6.6 mm
    Width 6.1 mm
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