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FJD3305H1TM
- Part No
- FJD3305H1TM
- Manufacturer
- onsemi
- Description
- Bipolar Transistors - BJT NPN Silicon Transistor
- Datasheet
- FJD3305H1TM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Base Voltage (VCBO) | 700 V |
| Collector Emitter Breakdown Voltage | 400 V |
| Collector Emitter Saturation Voltage | 1 V |
| Collector Emitter Voltage (VCEO) | 400 V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 9 V |
| Frequency | 4 MHz |
| Gain Bandwidth Product | 4 MHz |
| hFE Min | 8 |
| Max Breakdown Voltage | 400 V |
| Max Collector Current | 4 A |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 50 W |
| Min Operating Temperature | -65 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel |
| Polarity | NPN |
| Power Dissipation | 1.1 W |
| Transition Frequency | 4 MHz |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
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