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FDMS86102LZ
- Part No
- FDMS86102LZ
- Manufacturer
- onsemi
- Description
- FDMS86102LZ N-Channel MOSFET, 37 A, 100 V PowerTrench, 8-Pin PQFN ON Semiconductor
- Datasheet
- FDMS86102LZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 25 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 2.5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.305 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 69 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 1.5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 2.5 W |
| Rds On Max | 25 mΩ |
| Rise Time | 2.6 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 19 ns |
| Turn-On Delay Time | 6.7 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 74 mg |
| Height | 1.1 mm |
| Length | 5 mm |
| Width | 6 mm |
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