FDN537N Generic image

FDN537N

Part No
FDN537N
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET 30V, 6.5A, 23mΩ
Datasheet
FDN537N
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 23 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 465 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 600 mW
    Rds On Max 23 mΩ
    Rise Time 10 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 11 ns
    Turn-On Delay Time 5 ns
    Case/Package TO-236-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.12 mm
    Length 2.92 mm
    Width 1.4 mm
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