FDMS0310AS Generic image

FDMS0310AS

Part No
FDMS0310AS
Manufacturer
onsemi
Description
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been
Datasheet
FDMS0310AS
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 19 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 4.3 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 3.2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.28 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 41 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 2.5 W
    Rds On Max 4.3 mΩ
    Rise Time 3.9 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 9 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 74 mg
    Height 1.1 mm
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