FDMS3669S Generic image

FDMS3669S

Part No
FDMS3669S
Manufacturer
onsemi
Description
Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R
Datasheet
FDMS3669S
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.605 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2.5 W
    Rds On Max 10 mΩ
    Rise Time 3 ns
    Schedule B 8541290080
    Turn-Off Delay Time 24 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 6
    Weight 171 mg
    Height 1.1 mm
    Length 5 mm
    Width 5.9 mm
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