FDC2612 Generic image

FDC2612

Part No
FDC2612
Manufacturer
onsemi
Description
Transistor, Mosfet, N-channel, 200V V(br)dss, 1.1A I(d), TSOP
Datasheet
FDC2612
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.1 A
    Current Rating 1.1 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 725 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 234 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 800 mW
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 800 mW
    Rds On Max 725 mΩ
    Resistance 725 MΩ
    Rise Time 6 ns
    Schedule B 8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 17 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 200 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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