FDB5800 Generic image

FDB5800

Part No
FDB5800
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ
Datasheet
FDB5800
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 80 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 12.6 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 12.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.625 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 242 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 242 W
    Rds On Max 6 mΩ
    Resistance 6 MΩ
    Rise Time 22 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1 V
    Turn-Off Delay Time 27.1 ns
    Turn-On Delay Time 20.3 ns
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 11.33 mm
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