FDB088N08 Generic image

FDB088N08

Part No
FDB088N08
Manufacturer
onsemi
Description
FAIRCHILD SEMICONDUCTOR FDB088N08 MOSFET Transistor, N Channel, 120 A, 75 V, 0.0073 ohm, 10 V, 2 V
Datasheet
FDB088N08
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 85 A
    Drain to Source Breakdown Voltage 75 V
    Drain to Source Resistance 8.8 mΩ
    Drain to Source Voltage (Vdss) 75 V
    Element Configuration Single
    Fall Time 102 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 6.595 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 160 W
    Min Breakdown Voltage 75 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 160 W
    Rds On Max 8.8 mΩ
    Rise Time 158 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 244 ns
    Turn-On Delay Time 45 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 4.83 mm
    Length 10.67 mm
    Width 11.33 mm
    added to cart View cart